| PART |
Description |
Maker |
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| PHT41435B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| INA-54063-BLK |
3.0 GHz Low Noise Silicon MMIC Amplifier
|
Agilent(Hewlett-Packard...
|
| AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41400 AT-41400-GP4 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip
|
Agilent(Hewlett-Packard...
|
| AT-41435 AT41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Search -----> AT-41435
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| BAT15-098 Q62702-A0062 BAT15_98 |
From old datasheet system
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) 硅肖特基二极管（星展混合器的应用10 GHz低噪声系数低屏障型）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| INA-30311 INA-30311-BLK INA-30311-TR1 INA-30311- |
1 GHz Low Noise Silicon MMIC Amplifier
GT 14C 14#16 SKT PLUG
1 GHz的硅单片低噪声放大器
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| UPC2713T-E3 UPC2713T |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
Duracell
NEC[NEC]
|
| Q62702-F1772 BF2000W |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz)
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TMT-4-0504 |
Temperature Compensated Low Noise Amplifier 0.5 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
